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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1106
DESCRIPTION *With TO-3PN package *High frequency *Complement to type 2SC2581 APPLICATIONS *Audio power amplifer applications *DC-DC converters PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base
CONDITIONS
VALUE -140 -140 -6 -10 -4 100 150 -55~150
UNIT V V V A A W
Open collector
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA1106
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-140
V
VCE(sat(
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-100
A
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
A
hFE
DC current gain
IC=-3A ; VCE=4V
30
fT
Transition frequency
IE=0.5A ; VCE=-12V
20
MHz
Switching times
tr
Rise time IC=-5A;RL=12 IB1=- IB2=-0.5A VCC=60V
0.3
s
ts
Storage time
0.9
s
tf
Fall time
0.2
s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1106
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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